Publication: Detailed Modeling of the Epitaxial Growth of GaAs Nanowires

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Title	Detailed Modeling of the Epitaxial Growth of GaAs Nanowires
Authors/Editors*	E De Jong, RR LaPierre and JZ Wen
Where published*	Nanotechnology
How published*	Journal
Year*	2010
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Abstract	A detailed continuum model is presented for predicting the growth characteristics of GaAs nanowires during chemical beam epitaxy. The model describes the transport processes of Ga and As adatoms on the substrate and nanowire sidewalls, and through the nanoparticle and the nanowire-catalyst interface (NCI). The growth mechanism of nanowires within the NCI is described using an extended step-flow kinetic model. The vapor-liquid-solid (VLS) and vaporsolid- solid (VSS) growth mechanisms are both described in the kinetic model. The growth rate of nanowires, the surface and bulk concentrations of adatoms, and the role of transport processes of Ga and As adatoms were investigated during chemical beam epitaxy. It was found that the growth mechanism of nanowires varies with the increasing length of the nanowire.